? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c4a i dm t c = 25 c, pulse width limited by t jm 8a i a t c = 25 c4a e as t c = 25 c 200 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. f c mounting force (to-263) 10..65 / 2.2..14.6 nm/lb.in. weight to-263 2.5 g to-220 3.0 g g = gate d = drain s = source tab = drain ds99921(10/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 10 a v gs = 0v t j = 125 c 750 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 3.3 polar tm power mosfet hiperfet n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z avalanche rated z low r ds(on) and q g z low package inductance z fast intrinsic rectifier e advantages z easy to mount z space savings z high power density to-263 (i xfa ) g s (tab) IXFA4N100P ixfp4n100p v dss = 1000v i d25 = 4a r ds(on) 3.3 to-220 (i xfp ) d (tab) g s applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFA4N100P ixfp4n100p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 1.8 3.0 s r gi gate input resistance 1.6 c iss 1456 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 90 pf c rss 16 pf t d(on) 24 ns t r 36 ns t d(off) 37 ns t f 50 ns q g(on) 26 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 9 nc q gd 12 nc r thjc 0.83 c/w r thcs (to-220) 0.50 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 4 a i sm repetitive, pulse width limited by t jm 16 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 300 ns i rm 5.3 a q rm 0.34 c note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixfp) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-263 (ixfa) outline i f = 2a, v gs = 0v, -di/dt = 100a/ s v r = 100v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 (external)
? 2008 ixys corporation, all rights reserved IXFA4N100P ixfp4n100p fig. 1. output characteristics @ 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0123456789101112 v ds - volts i d - amperes v gs = 10v 8v 7v 5 v 6 v fig. 2. extended output characteristics @ 25oc 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 8v 7 v 6 v 5 v fig. 3. output characteristics @ 125oc 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0 2 4 6 8 10121416182022242628 v ds - volts i d - amperes v gs = 10v 7v 5 v 6v fig. 4. r ds(on) normalized to i d = 2a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 4a i d = 2a fig. 5. r ds(on) normalized to i d = 2a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 012345678 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFA4N100P ixfp4n100p fig. 7. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 9 10 11 12 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 500v i d = 2a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: f_4n100p(45-744)10-08-08
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